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| CLY29 HiRel C-Band GaAs Power-MESFET * * * * * * * HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 8 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/006, Type Variant No.s 04 to 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLY29-00 (ql) CLY29-05 (ql) CLY29-10 (ql) - see below G MWP-25 CLY29-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702L117 on request on request Q62702L116 (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLY29 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 14 16 -6 700 4 1.5 at VDS 9 V 2.5 at VDS 8 V 3.5 at VDS 7 V Unit V V V mA mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.: 5) PC PC TJ Tstg Ptot Tsol 3.5 at VDS 7 V tbd. 175 - 65...+ 175 3.55 230 dB dB C C W C Rth JS 38 K/W 1) Operation Range 1: 135 mA ID 270 mA 2) Operation Range 2: ID > 270 mA 3) Operation Range 3: ID < 135 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLY29 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 20 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Drain current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Gate current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Transconductance VDS = 3 V, ID = 200 mA Thermal resistance junction to soldering point VDS = 9 V, ID = 200 mA, Ts = +25C Rth JS 32 K/W gm 150 190 mS -IGp12 400 A IDp12 1000 A -IGp3 20 A IDp3 50 A -VGth 1.6 2.6 3.6 V IDss 300 500 700 mA Semiconductor Group 3 of 10 Draft D, September 99 CLY29 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Linear power gain 1) VDS = 9 V, ID = 200 mA, f = 2.3 GHz, Pin = 0 dBm CLY29-00 CLY29-05 CLY29-10 Output power at 1dB gain compr. 1) VDS = 9 V, ID(RF off) = 200 mA, f = 2.3 GHz CLY29-00 CLY29-05 CLY29-10 Output power 1) VDS = 9 V, ID(RF off) = 200 mA, f = 2.3 GHz, Pin = 16.5 dBm CLY29-00 CLY29-05 CLY29-10 Power added efficiency 1), 2) Glp dB 13.5 14.0 14.0 P1dB 15.0 15.2 15.2 dBm Pout 28.8 29.3 30.0 dBm 28.5 29.0 29.5 PAE 28.8 29.3 30.0 % VDS = 9 V, ID(RF off) = 200 mA, f = 2.3 GHz, Pin = 16.5 dBm CLY29-00 CLY29-05 CLY29-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 40 45 45 50 52 55 - Semiconductor Group 4 of 10 Draft D, September 99 CLY29 Typical Common Source S-Parameters V DS = 3 V, I D = 180 mA, Z o = 50 |S21| 5 of 10 Draft D, September 99 CLY29 Typical Common Source S-Parameters (continued) V DS = 5 V, I D = 180 mA, Z o = 50 |S21| 6 of 10 Draft D, September 99 CLY29 Typical Common Source S-Parameters (continued) V DS = 9 V, I D = 180 mA, Z o = 50 |S21| 7 of 10 Draft D, September 99 CLY29 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CLY29- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62702L116 CLY29-10 ES For CLY29; Output Power Level 10 (Pout>29.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 8 of 10 Draft D, September 99 CLY29 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. 1 2 3 The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 10 Draft D, September 99 |
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